Anhui Rinengzhongtian Semiconductor Development QJM325-72

Mono-c-Si

325.162 W Pmax

45.14 V Voc

9.48 A Isc

36.7 V Vmp

8.86 A Imp

16.76 % eff.

0.7599 FF

72 cells

IV curves not yet precomputed for this module. Run python manage.py precompute_iv_curves to generate them.

CEC Single-Diode Model Parameters

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	325.162	W
PTC Power	PTC	292.9	W
Open-circuit voltage	V_oc_ref	45.14	V
Short-circuit current	I_sc_ref	9.48	A
Max-power voltage	V_mp_ref	36.7	V
Max-power current	I_mp_ref	8.86	A
Fill factor	FF	0.7599	—
Efficiency (STC)	η	16.76	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.003995	A/°C
Voc temperature coefficient	beta_oc	-0.152966	V/°C
Pmax temperature coefficient	gamma_r	-0.4676	%/°C
NOCT	T_NOCT	45.7	°C
CEC Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.91041	V
Light-generated current (ref)	I_L_ref	9.49051	A
Saturation current (ref)	I_o_ref	—	A
Series resistance	R_s	0.31847	Ω
Shunt resistance (ref)	R_sh_ref	287.351	Ω
Cells in series	N_s	72	—
CEC Adjust factor	Adjust	10.4045	%

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Module Specifications

Technology Mono-c-Si

Bifacial No

BIPV No

Cells in series 72

Module area 1.94 m²

Dimensions 1.956 × 0.992 m

NOCT 45.7 °C

CEC listing date 11/16/2022