Aptos Solar Technology LLC DNA-120-MF10-445W-USAptos1
Mono-c-Si
445
W Pmax
41.27
V Voc
13.42
A Isc
34.46
V Vmp
12.92
A Imp
20.8
% eff.
0.8039
FF
60
cells
IV & PV Curves at STC (1000 W/m², 25 °C)
IV Curves at Multiple Conditions
Irradiance sweep at 25 °C
Temperature sweep at 1000 W/m²
Single-Diode Model Parameters
Source: California Energy Commission module list · retrieved via SAM library · energy.ca.gov · All data sources
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 445.223 | W |
| PTC Power | PTC | 419.6 | W |
| Open-circuit voltage | V_oc_ref | 41.27 | V |
| Short-circuit current | I_sc_ref | 13.42 | A |
| Max-power voltage | V_mp_ref | 34.46 | V |
| Max-power current | I_mp_ref | 12.92 | A |
| Fill factor | FF | 0.8039 | — |
| Efficiency (STC) | η | 20.8 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.005663 | A/°C |
| Voc temperature coefficient | beta_oc | -0.097645 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.3284 | %/°C |
| NOCT | T_NOCT | 43.3 | °C |
| Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.44 | V |
| Light-generated current (ref) | I_L_ref | 13.42 | A |
| Saturation current (ref) | I_o_ref | 4.77e-12 | A |
| Series resistance | R_s | 0.17666 | Ω |
| Shunt resistance (ref) | R_sh_ref | 547506.45 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 5.4959 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
2.14 m²
NOCT
43.3 °C
Temp. coefficient of Pmax
-0.328 %/°C
Temp. coefficient of Voc
-0.237 %/°C
Temp. coefficient of Isc
0.042 %/°C
CEC list
On the 23 Jun 2026 list
Parameters from
23 Jun 2026 list
Measured Data
No measured data yet for this module.
Same Test Data
2 listings with identical nameplate test data, one per frame, color or backsheet version.
- DNA-120-MF10-445W-USAptos1 Main listing, this page
- DNA-120-MF10-445W-USAptos2
Related Models
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Other manufacturers, same technology and cell count, power within 3 %.
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