Changzhou Eging Photovoltaic Technology EG-195P54-C

Multi-c-Si
194.967 W Pmax
32.8 V Voc
8.37 A Isc
26.1 V Vmp
7.47 A Imp
13.22 % eff.
0.7102 FF
54 cells
IV curves not yet precomputed for this module. Run python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
Parameter Symbol Value Unit
Nameplate (STC)
STC Power STC 194.967 W
PTC Power PTC 173.9 W
Open-circuit voltage V_oc_ref 32.8 V
Short-circuit current I_sc_ref 8.37 A
Max-power voltage V_mp_ref 26.1 V
Max-power current I_mp_ref 7.47 A
Fill factor FF 0.7102
Efficiency (STC) η 13.22 %
Temperature Coefficients
Isc temperature coefficient alpha_sc 0.005022 A/°C
Voc temperature coefficient beta_oc -0.1148 V/°C
Pmax temperature coefficient gamma_r -0.46 %/°C
NOCT T_NOCT 46.7 °C
CEC Single-Diode (De Soto) Parameters
Modified ideality factor a_ref 1.42539 V
Light-generated current (ref) I_L_ref 8.42255 A
Saturation current (ref) I_o_ref A
Series resistance R_s 0.34164 Ω
Shunt resistance (ref) R_sh_ref 54.411 Ω
Cells in series N_s 54
CEC Adjust factor Adjust 11.8007 %
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Module Specifications
Technology Multi-c-Si
Bifacial No
BIPV No
Cells in series 54
Module area 1.475 m²
Dimensions 1.49 × 0.99 m
NOCT 46.7 °C
CEC listing date 11/16/2022
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