Changzhou Eging Photovoltaic Technology EG-285M72-C
Mono-c-Si
285.131
W Pmax
44.4
V Voc
8.92
A Isc
35.42
V Vmp
8.05
A Imp
14.64
% eff.
0.7199
FF
72
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 285.131 | W |
| PTC Power | PTC | 253.5 | W |
| Open-circuit voltage | V_oc_ref | 44.4 | V |
| Short-circuit current | I_sc_ref | 8.92 | A |
| Max-power voltage | V_mp_ref | 35.42 | V |
| Max-power current | I_mp_ref | 8.05 | A |
| Fill factor | FF | 0.7199 | — |
| Efficiency (STC) | η | 14.64 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.002676 | A/°C |
| Voc temperature coefficient | beta_oc | -0.15984 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.48 | %/°C |
| NOCT | T_NOCT | 46.8 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.90414 | V |
| Light-generated current (ref) | I_L_ref | 8.96477 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.42555 | Ω |
| Shunt resistance (ref) | R_sh_ref | 84.792 | Ω |
| Cells in series | N_s | 72 | — |
| CEC Adjust factor | Adjust | 6.4456 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
72
Module area
1.948 m²
Dimensions
1.968 × 0.99 m
NOCT
46.8 °C
CEC listing date
11/16/2022
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