Hanwha Q CELLS Q.PLUS L-G4 325
Multi-c-Si
324.795
W Pmax
46.43
V Voc
9.44
A Isc
36.7
V Vmp
8.85
A Imp
16.29
% eff.
0.741
FF
72
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 324.795 | W |
| PTC Power | PTC | 297.4 | W |
| Open-circuit voltage | V_oc_ref | 46.43 | V |
| Short-circuit current | I_sc_ref | 9.44 | A |
| Max-power voltage | V_mp_ref | 36.7 | V |
| Max-power current | I_mp_ref | 8.85 | A |
| Fill factor | FF | 0.741 | — |
| Efficiency (STC) | η | 16.29 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.003776 | A/°C |
| Voc temperature coefficient | beta_oc | -0.143933 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.41 | %/°C |
| NOCT | T_NOCT | 45.1 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.80916 | V |
| Light-generated current (ref) | I_L_ref | 9.45279 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.4975 | Ω |
| Shunt resistance (ref) | R_sh_ref | 367.057 | Ω |
| Cells in series | N_s | 72 | — |
| CEC Adjust factor | Adjust | 2.546 | % |
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Module Specifications
Technology
Multi-c-Si
Bifacial
No
BIPV
No
Cells in series
72
Module area
1.994 m²
Dimensions
1.994 × 1.0 m
NOCT
45.1 °C
CEC listing date
11/16/2022
Annual degradation
0.5%/yr
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