Hengdian Group DMEGC Magnetics DM640G12RT-B66yyy

Mono-c-Si

640 W Pmax

49.9 V Voc

16.33 A Isc

41.6 V Vmp

15.39 A Imp

23.71 % eff.

0.7857 FF

66 cells

IV & PV Curves at STC (1000 W/m², 25 °C)

IV Curves at Multiple Conditions

Irradiance sweep at 25 °C

Temperature sweep at 1000 W/m²

Single-Diode Model Parameters

Source: California Energy Commission module list · retrieved via SAM library · energy.ca.gov · All data sources

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	640.224	W
PTC Power	PTC	602.7	W
Open-circuit voltage	V_oc_ref	49.9	V
Short-circuit current	I_sc_ref	16.33	A
Max-power voltage	V_mp_ref	41.6	V
Max-power current	I_mp_ref	15.39	A
Fill factor	FF	0.7857	—
Efficiency (STC)	η	23.71	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.007838	A/°C
Voc temperature coefficient	beta_oc	-0.116766	V/°C
Pmax temperature coefficient	gamma_r	-0.299	%/°C
NOCT	T_NOCT	46.6	°C
Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.74546	V
Light-generated current (ref)	I_L_ref	16.34847	A
Saturation current (ref)	I_o_ref	6.16e-12	A
Series resistance	R_s	0.18106	Ω
Shunt resistance (ref)	R_sh_ref	160.079	Ω
Cells in series	N_s	66	—
CEC Adjust factor	Adjust	7.1926	%

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Module Specifications

Technology Mono-c-Si

Bifacial No

BIPV No

Cells in series 66

Module area 2.7 m²

NOCT 46.6 °C

Temp. coefficient of Pmax -0.299 %/°C

Temp. coefficient of Voc -0.234 %/°C

Temp. coefficient of Isc 0.048 %/°C

CEC list On the 23 Jun 2026 list

Parameters from 23 Jun 2026 list

Measured Data

No measured data yet for this module.

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