DualSun SAS DualSun 315M-60-00
Mono-c-Si
314.962
W Pmax
40.5
V Voc
10.1
A Isc
33.4
V Vmp
9.43
A Imp
19.2
% eff.
0.77
FF
60
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 314.962 | W |
| PTC Power | PTC | 288.0 | W |
| Open-circuit voltage | V_oc_ref | 40.5 | V |
| Short-circuit current | I_sc_ref | 10.1 | A |
| Max-power voltage | V_mp_ref | 33.4 | V |
| Max-power current | I_mp_ref | 9.43 | A |
| Fill factor | FF | 0.77 | — |
| Efficiency (STC) | η | 19.2 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.004242 | A/°C |
| Voc temperature coefficient | beta_oc | -0.112995 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.368 | %/°C |
| NOCT | T_NOCT | 48.8 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.54219 | V |
| Light-generated current (ref) | I_L_ref | 10.1161 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.25128 | Ω |
| Shunt resistance (ref) | R_sh_ref | 157.396 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 8.564 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.64 m²
NOCT
48.8 °C
CEC listing date
11/16/2022
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